Single-poly EEPROM의 프로그램 및 소거특성에 관한 연구

A study on the programming and erasing chracteristics of single-poly EEPROM

In this work, single-poly EEPROM has been designed and fabricated by using standard 0.8.mu.m CMOS process. The initial threshold voltage was aobut 0.8V but it increased ot about 6.5V after programming at Vds=11.5V and Vcg=6.5V. After erasing devices at Vs=14.2V, the threshold voltage decreased to about 1.5V. The programming time and erasing trime wree about 6ms. and 100ms. respectively. The erasing time can be reduced by applying a series of shorter erase pulse s instead of a long single erase pulse.