Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1998.06a
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- Pages.398-400
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- 1998
Studies on chemical wet etching of GaN
GaN계 질화합물 반도체의 습식식각 연구
Abstract
In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10
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