Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1998.06a
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- Pages.343-346
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- 1998
Electrical properties variations of nitrided, reoxided MOS devices by nitridation condition
질화와 재산화 조건에 따른 모스 소자의 전기적 특성변화
Abstract
Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal
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