Characterization of Phase change Memory Cell for Contact Area

접촉 면적에 따른 상변화 메모리 소자의 특성 고찰

An ideal semiconductor memory technology would combine or unify the attractive features of these technologies without acquiring any of the unattractive features. Such a memory technology, Phase Change RAM is now being developed using the class of elements known as chalcogenides. It is expected that this technology will eventually allow chips that have SRAM speed, DRAM cost, and Flash power characteristics and non-volatility.