대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2003년도 하계학술대회 논문집 C
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- Pages.1574-1576
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- 2003
ICP-CVD 방법에 의해 성장된 탄소나노튜브의 Ni 및 Co 촉매 두께에 따른 구조적 물성 및 전계 방출 특성 분석
Characterization of structural and field emissive properties of CNTs grown by ICP-CVD method as a function of Ni and Co catalysts thickness
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김종필
(한양대학교 전자전기제어계측공학과) ;
- 김영도 (한양대학교 전자전기제어계측공학과) ;
- 박창균 (한양대학교 전자전기제어계측공학과) ;
- 엄현석 (한양대학교 전자전기제어계측공학과) ;
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박진석
(한양대학교 전자전기제어계측공학과)
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Kim, Jong-Pil
(Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
- Kim, Young-Do (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
- Park, Chong-Kyun (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
- Uhm, Hyun-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
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Park, Jin-Seok
(Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
- 발행 : 2003.07.21
초록
Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at
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