대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2003년도 하계학술대회 논문집 C
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- Pages.1568-1570
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- 2003
ITO/PTFE/Al 소자에서 PTFE 박막의 두께에 따른 전압-전류(I-V) 특성
Current-Voltage(I-V) Characteristics of ITO/PTFE/Al device with a variation of PTFE thickness
초록
We have studied the I-V characteristics of polytetrafluoroethylene(PTFE) thin film depending on a variation of thickness. Polymer PTFE buffer layer was made using thermal evaporation technique. The device was made in the structure of ITO/PTFE/Al. We have observed the NDR(negative differential resistance) behavior between 2.5V and 5V. There are some reports on this NDR behavior in the polymer thin film[1]. We have studied the NDR behavior depending on a variation thickness. As the film thickness increased, The NDR behavior decreased and moved in low electrical field, and we have studied the conduction mechanism of PTFE thin film.
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