$Z_nO$ 바리스터의 유전특성 및 등가회로

Dielectric Properties and Equivalent Circuit of $Z_nO$ Varistor

In this study capacitance and dielectric loss tan${\delta}$were measured with frequency changes for commercial $Z_nO$ varistors with pin-type leads and equivalent circuit simulation was proposed. The leakage inductance in pin leads and the stray caoacitance could be seperated from the dielectric characteristics of $Z_nO$ varistors by the simulation of equivalent circuit. The equivalent circuit model considered semiconduction layer, dielectric layer and depletion layer as the grain boundary structure of varistor is well fitted to the observed data.