Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2002.02a
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- Pages.110-110
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- 2002
Enhancement of GaN crystallinity by using $H_2/N_2$ Plasma exposure to sapphire substrate
- Kim, Jae-Kyun (Nano Device Research Center, Korea Institute of Science and Technology) ;
- Park, Young-Ju (Nano Device Research Center, Korea Institute of Science and Technology) ;
- Kim, Eun-Kyu (Nano Device Research Center, Korea Institute of Science and Technology) ;
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Byun, Dong-Jin
(Department of Materials Science and Engineering, Korea University)
;
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Koh, Eui-Kwan
(Seoul branch, Korea Basic Science Institute)
- Published : 2002.02.19
Abstract
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