Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structure design of Csl-Se Detector using Monte Carlo Simulation

몬테카를로 시뮬레이션을 통한 Csl-Se 검출기의 구조 설계

  • Park, Ji-Koon (Department of Biomedical Engineering of Inje University) ;
  • Kang, Sang-Sik (Department of Biomedical Engineering of Inje University) ;
  • Choi, Jang-Young (Department of Biomedical Engineering of Inje University) ;
  • Lee, Hung-Won (Medical Imageing Research center of Inje University) ;
  • Nam, Sang-Hee (Medical Imageing Research center of Inje University)
  • 박지군 (인제대학교 의용공학과) ;
  • 강상식 (인제대학교 의용공학과) ;
  • 최장용 (인제대학교 의용공학과) ;
  • 이형원 (인제대학교 의료영상연구소) ;
  • 남상희 (인제대학교 의료영상연구소)
  • Published : 2002.11.07
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Abstract

In recent years, there has been keen interest in developing f1at panel detectors for all modalities of radiology, including gerneral radiology, fluoroscopy(angiography and cardiology), electronic portal imaging, and mammography. In this paper, we report the new hybrid x-ray detector consisted of CsI(Tl) photoemission layer and a-Se photoconductor layer to resolve conventional x-ray detector such as the direct detector using a-Se and the indirect detector using CsI(Tl)/a-Si. To design the structure of CsI(Tl)/a-Se detector, the penetrated energy spectrum and absorption fraction was estimated using MCNP 4C code. Experimental results showed that the absorption fraction of $500{\mu}m-Se$ film and $150{\mu}m-CsI\left(Tl \right)/a-Se\left( 30{\mu}m \right)$ film is 70% at 70 kVp. The absorption energy is 90% at $350{\mu}m-CsI(Tl)$.

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