한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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분극에 의한 SBN30 박막의 강유전특성 변화

Poling-dependent Ferroelectric Properties of SBN30 Thin Films

  • 장재훈 (영남대학교 재료금속공학부) ;
  • 이동근 (영남대학교 재료금속공학부) ;
  • 이희영 (영남대학교 재료금속공학부)
  • Jang, Jae-Hoon (School of Metallurgical and Materials Engineering, Yeungnam University) ;
  • Lee, Dong-Gun (School of Metallurgical and Materials Engineering, Yeungnam University) ;
  • Lee, He-Young (School of Metallurgical and Materials Engineering, Yeungnam University)
  • 발행 : 2002.11.07
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초록

Ferroelectric $Sr_{0.3}Ba_{0.7}Nb_{2}O_{6}$ (SBN30) thin films were deposited on Pt/Ti/$SiO_{2}$/Si(100) substrates by ion beam sputtering. During annealing treatment at $750^{\circ}C$, poling was attempted by applying dc voltage bias across polished surfaces. Phase relation, microstructure and crystallization behavior were examined using XRD and FE-SEM. Ferroelectric hysteresis characteristics were also determined where both remanent polarization and coercive values decreased with the increase of bias voltage. The measured remanent polarization and coercive field values at 5 V and 10 V bias were $36{\mu}C/cm^2$, $10{\mu}C/cm^2$ and 100kV /cm, 80kV /cm, respectively.

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