한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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- Pages.202-205
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- 2002
Si-O 초격자 구조의 포토루미네슨스 특성
Photoluminescence Characteristics of Si-O Superlattice Structure
- 정소영 (대불대학교 나노정보소재연구소) ;
- 서용진 (대불대학교 나노정보소재연구소) ;
- 박성우 (대불대학교 나노정보소재연구소) ;
- 이경진 (대불대학교 나노정보소재연구소) ;
- 김철복 (동성 A&T) ;
- 김상용 (아남반도체 주식회사)
- Jeong, So-Young (Nano-Information Materials & Devices Lab. DAEBUL University) ;
- Seo, Yong-Jin (Nano-Information Materials & Devices Lab. DAEBUL University) ;
- Park, Sung-Woo (Nano-Information Materials & Devices Lab. DAEBUL University) ;
- Lee, Kyoung-Jin (Nano-Information Materials & Devices Lab. DAEBUL University) ;
- Kim, Chul-Bok (Dong Sung A&T) ;
- Kim, Sang-Yong (ANAM Semiconductor)
- 발행 : 2002.11.07
초록
The photoluminescence (PL) characteristics of the silicon-oxygen(Si-O) superlattice formed by molecular beam epitaxy (MBE) were studied. To confirm the presence of the nanocrystalline Si structure, Raman scattering measurement was performed. The blue shift was observed in the PL peak of the oxygen-annealed sample, compared to the hydrogen-annealed sample, which is due to a contribution of smaller crystallites. Our results determine the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high-speed and low-power silicon MOSFET devices in the future.
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