한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

PLD를 이용한 ZnO 박막의 발광에 관한 연구

Photoluminescence characteristics of ZnO thin films by Pulsed laser deposition

  • 김재홍 (인하대학교 전기공학과) ;
  • 이경철 (인하대학교 전기공학과) ;
  • 이천 (인하대학교 전기공학과)
  • 발행 : 2002.07.08
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초록

ZnO thin films on (100)p-type silicon substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YGA laser with a wavelength of 266nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for substrate temperatures in the range of $200{\sim}500^{\circ}C$ and oxygen pressure in the range of $10^{-2}{\sim}10^2mTorr$. We investigated the structural, morphological and optical properties of ZnO thin films using X-ray diffraction(XRD), atomic force microscopy(AFM), photoluminescence(PL).

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