한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

비정질 셀레늄의 누설전류 저감을 위한 다층구조 제작 및 특성 평가

The Multi-layer Fabrication and Characteristic Performance for Dark Current Reduction of Amorphous Selenium

  • 박지군 (인제대학교 의용공학과) ;
  • 강상식 (인제대학교 의용공학과) ;
  • 석대우 (인제대학교 의용공학과) ;
  • 이형원 (인제대학교 의료영상연구소) ;
  • 남상희 (인제대학교 의료영상연구소)
  • 발행 : 2002.07.08
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초록

Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

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