한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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- Pages.849-852
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- 2002
비정질 셀레늄의 누설전류 저감을 위한 다층구조 제작 및 특성 평가
The Multi-layer Fabrication and Characteristic Performance for Dark Current Reduction of Amorphous Selenium
초록
Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.