Electrical and structural properties of Ti thin films by sputtering

스퍼터링법으로 제조한 타이타늄 박막의 전기적 및 구조적 특성

  • 김영준 (목포대학교 전기공학과) ;
  • 박종윤 (목포대학교 전기공학과) ;
  • 정운조 (목포대학교 전기공학과) ;
  • 박계춘 (목포대학교 전기공학과) ;
  • 이진 (목포대학교 전기공학과)
  • Published : 2002.07.08

Abstract

Ti films were deposited onto $100{\times}100$ mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T. ${\sim}400^{\circ}C$, annealing temperature of $100{\sim}400^{\circ}C$ and sputtering gas pressure of $1.3{\sim}3.0{\times}10^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ${\sim}200^{\circ}C$, target-substrate distance of ~14 cm and sputtering pressure of $1.3{\sim}1.7{\times}10^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.

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