Sb 치환에 따른 $BiNbO_4$ 세라믹스의 고주파 유전특성의 변화

Microwave Dielectric Properties of Sb substituted $BiNbO_4$ Ceramics

The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.