한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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- Pages.570-573
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- 2002
Sputtering법으로 성장한 PZT 박막의 Target의 Pb Excess에 따른 전기적 특성에 관한 연구
Electrical characteristic of PZT thin film deposit by Rf-magnetron sputtering as Pb excess ratio of target
초록
Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at