한국정보디스플레이학회:학술대회논문집
- 2002.08a
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- Pages.1035-1038
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- 2002
Electrical properties of the Porous polycrystalline silicon Nano-Structure as a cold cathode field emitter
- Lee, Joo-Won (L6320, Display and Nano-devices Laboratory, Korea Institute of Science and Technology) ;
- Kim, Hoon (L6320, Display and Nano-devices Laboratory, Korea Institute of Science and Technology) ;
- Lee, Yun-Hi (L6320, Display and Nano-devices Laboratory, Korea Institute of Science and Technology) ;
- Jang, Jin (Department of Physics, Kyung-hee University) ;
- Oh, Myung-Hwan (Department of Electrical Engineering, Dan-kook University) ;
- Ju, Byung-Kwon (L6320, Display and Nano-devices Laboratory, Korea Institute of Science and Technology)
- Published : 2002.08.21
Abstract
The electrical properties of Porous polycrystalline silicon Nano-Structure (PNS) as a cold cathode were investigated as a function of anodizing condition, the thickness of Au film as a top electrode and the substrate temperature. Non-doped 2
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