한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
권호 표지

Semiconductor Nanowires;Their Emission Stability and Energy Distribution

  • Yu, Se-Gi (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
  • Yi, Whi-Kun (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
  • Lee, Sang-Hyun (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
  • Heo, Jung-Na (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
  • Jeong, Tae-Won (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
  • Lee, Jeong-Hee (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
  • Lee, Soo-Chang (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
  • Kim, J.M. (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
  • Lee, Cheol-Jin (Department of Nanotechnology, Hangyang University) ;
  • Lyu, Seung-Chul (Department of Nanotechnology, Hangyang University) ;
  • Han, Jae-Hee (Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University) ;
  • Yoo, Ji-Beom (Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University)
  • 발행 : 2002.08.21
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초록

Ga-based semiconductor nanowires (GaN, GaP) were synthesized by the reaction of Ga metal and GaN/GaP powder with a $NH_3/Ar$ gas using thermal chemical vapor deposition. The field emission and emission stability under oxygen and argon environments were investigated. Field emission energy distributions of electrons from these nanowires revealed that field emission mechanism of the semiconductor nanowires were different from carbon nanotubes.

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