한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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- Pages.647-650
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- 2002
Fabrication and Electrical Characteristics of a Lateral type GaN Field Emission Diode
- Lee, Jae-Hoon (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Lee, Hyung-Ju (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Lee, Myoung-Bok (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Hahm, Sung-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Lee, Jung-Hee (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Choi, Kue-Man (Reseach Institute of Electronic and Telecommunication Technologies, Kwandong University)
- 발행 : 2002.08.21
초록
A lateral type GaN field emission diodes were fabricated by utilizing metal organic chemical vapor deposition (MOCVD). In forming the pattern, two kinds of procedures were proposed: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing
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