$J_{c}$ control ofNb/$Al_{2}$$O_{3}$ /Nb Josephson junction

Nb/$Al_{2}$$O_{3}$ /Nb 조셉슨 접합의 임계전류밀도 제어

Single Josephson junctions of 50 $\mu$m $\times$ 50 $\mu$m were fabricated for several oxidation conditions to investigate controllabilities of critical current density ($J_{c}$) with the standard KRISS processes. Considering the self-field effect suppressing the observed critical current ($I_{c}$) at high $J_{c}$ region, we could reasonably estimate $J_{c}$ values from I-V observations. The dependence of the estimated $J_{c}$ as a function of exposure, which is equal to pressure(P) times time(t), was well fitted to a curve of $J_{c}$ ~ $(Pt)^{-0.36}$. The maximum $J_{c}$ value at the controllability margin was found to be 4 kA/$cm^{2}$ with the current equipment set up.