Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2002.05a
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- Pages.279-282
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- 2002
Influence of Process Condition on Contact Resistance in WSix Deposition
WSix 증착에서 공정조건이 contact 저항에 미치는 영향
Abstract
In this paper, we discuss influence of process condition on contact resistance in WSix deposition process. In the WSix deposition process, we confirmed that word line to bit line contact resistance(WBCR) due to temperature of word line WSix deposition among various process condition split experiment. RTP treatment, d-poly ion implantation dose and thickness was estimated a little bit influence on contact resistance. Also, life time of shower head in the process chamber for WSix deposition related to contact resistance. The results obtained in this study are applicable to process control and electrical characteristics for high reliability and high density DRAM's.