Electrical Properties of Metal - Insulator- Metal Diode for AM-LCD Driving

  • Kim, Jang-Kwon (Dept. of Electronic & Telecommunication Engineering Daelim Technical College) ;
  • Lee, Myung-Jae (Dept. of Electronics Engineering, KyungHee University) ;
  • Kim, Dong-Sik (School of Computing & Information Systems Inha Technical College) ;
  • Chung, Kwan-Soo (Dept. of Electronic Engineering, KyungHee University)
  • Published : 2002.07.01

Abstract

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

Keywords