Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2002.06b
- /
- Pages.217-220
- /
- 2002
A Study on the High Temperature Characteristics of Power LDMOSFETS Having Various 130en0e0 Gate Length
고온영역에서 게이트 확장 길이 변화에 따른 고내압 LDMOSFET의 전기적 특성연구
- Kim, Beom-Ju (Dept. of Electronic Engineering, Sogang University) ;
-
Koo, Yong-Seo
(Dept. of Electronic Engineering, Seokyeong University) ;
-
Roh, Tae-Moon
(ETRI-Electronics and Telecommunications Research Institute) ;
- An, Chul (Dept. of Electronic Engineering, Sogang University)
- Published : 2002.06.01
Abstract
In this paper, we have investigated electronical chara-cteristics of power LDMOSFETS having different ex-tended gate lengths(1.B
Keywords