Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the High Temperature Characteristics of Power LDMOSFETS Having Various 130en0e0 Gate Length

고온영역에서 게이트 확장 길이 변화에 따른 고내압 LDMOSFET의 전기적 특성연구

  • Kim, Beom-Ju (Dept. of Electronic Engineering, Sogang University) ;
  • Koo, Yong-Seo (Dept. of Electronic Engineering, Seokyeong University) ;
  • Roh, Tae-Moon (ETRI-Electronics and Telecommunications Research Institute) ;
  • An, Chul (Dept. of Electronic Engineering, Sogang University)
  • 김범주 (서강대학교 전자공학과) ;
  • 구용서 (서경대학교 전자공학과) ;
  • 노태문 (한국전자통신연구원) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 2002.06.01
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Abstract

In this paper, we have investigated electronical chara-cteristics of power LDMOSFETS having different ex-tended gate lengths(1.B${\mu}{\textrm}{m}$, 2.4${\mu}{\textrm}{m}$, 3.O${\mu}{\textrm}{m}$) in the temperature range of 300k-500K. The results of this study indicate that on-resistance, breakdown voltage increase with temperature. and drain current, threshold voltage, transconductance decrease with temperature. Particular the facts, we observed that Le is the more increase, on-resistance is the more decrease. because every conditions are fixed normal states, only change the Le. As a result, Ron/BV, known for a figure of merit of power device, increase with temperature.

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