Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Design and implementation of a Low Noise Amplifier for DSRC using GaAs MESFET

GaAs MESFET을 이용한 DSRC용 LNA MMIC 설계 및 구현

  • Moon, Tae-Jung (Dept. of Electrical Information Communication Control, Kyung-Nam Collage of Information & Technology) ;
  • Hwang, Sung-Bum (Dept. of Electrical Information Communication Control, Kyung-Nam Collage of Information & Technology) ;
  • Kim, Byoung-Kook (Dept. of Electrical Electrical Electronics Computing Engineering, Dong-A University) ;
  • Ha, Young-Chul (Dept. of Electrical Electrical Electronics Computing Engineering, Dong-A University) ;
  • Hur, Hyuk (Dept. of Electrical Electrical Electronics Computing Engineering, Dong-A University) ;
  • Song, Chung-Kun (Dept. of Electrical Electrical Electronics Computing Engineering, Dong-A University) ;
  • Hong, Chang-Hee (Dept. of Electrical Electrical Electronics Computing Engineering, Dong-A University)
  • 문태정 (경남정보대학 전자정보통신제어계열) ;
  • 황성범 (경남정보대학 전자정보통신제어계열) ;
  • 김병국 (동아대학교 전자공학과) ;
  • 하영철 (동아대학교 전자공학과) ;
  • 허혁 (동아대학교 전자공학과) ;
  • 송정근 (동아대학교 전자공학과) ;
  • 홍창희 (동아대학교 전자공학과)
  • Published : 2002.06.01
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Abstract

We have optimally designed and implemented by a monolithic microwave integrated circuit(MMIC) the low noise amplifier(LNA) of 5.8GHz band composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication using a depletion-mode GaAs MESFET. The LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18㎃, The gain at center frequency 5.8GHz is 13.4dB, Noise figure(NF) is 1.94dB, Input 3rd order intercept point(lIPS) is 3dBm, and Input return loss(5$_{11}$) and Output return loss(S$_{22}$) is -l8dB and -13.3dB, respectively. The circuit size is 1.2$\times$O.7$\textrm{mm}^2$.EX>.>.

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