Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2002.06b
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- Pages.45-48
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- 2002
A Study on Electron-beam Lithography Simulation for Resist Surface Roughness Prediction
Resist 표면 거칠기 예측을 위한 전자빔 리소그라피 시뮬레이션에 관한 연구
- Kim, Hak (School of Electrical Engineering and Computer Science, and Inter-university Semiconductor Researcher Center, Seoul National University) ;
- Han, Chang-Ho (School of Electrical Engineering and Computer Science, and Inter-university Semiconductor Researcher Center, Seoul National University) ;
- Lee, Ki-Yong (School of Electrical Engineering and Computer Science, and Inter-university Semiconductor Researcher Center, Seoul National University) ;
- Lee, Woo-Jin (School of Electrical Engineering and Computer Science, and Inter-university Semiconductor Researcher Center, Seoul National University) ;
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Chun, Kuk-Jin
(School of Electrical Engineering and Computer Science, and Inter-university Semiconductor Researcher Center, Seoul National University)
- 김학 (서울대학교 전기컴퓨터공학부, 반도체 공동연구소) ;
- 한창호 (서울대학교 전기컴퓨터공학부, 반도체 공동연구소) ;
- 이기용 (서울대학교 전기컴퓨터공학부, 반도체 공동연구소) ;
- 이우진 (서울대학교 전기컴퓨터공학부, 반도체 공동연구소) ;
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전국진
(서울대학교 전기컴퓨터공학부, 반도체 공동연구소)
- Published : 2002.06.01
Abstract
This paper discusses the surface roughness of negative chemically amplified resists, SAL601 exposed by I-beam direct writing. system. Surface roughness, as measured by atomic force microscopy, have been simulated and compared to experimental results. Molecular-scale simulator predicts the roughness dependence on material properties and process conditions. A chemical amplification is made to occur in the resists during PEB process. Monte-Carlo and exposure simulations are used as the same program as before. However, molecular-scale PEB simulation has been remodeled using a two-dimensional molecular lattice representation of the polymer matrix. Changes in surface roughness are shown to correlate with the dose of exposure and tile baking time of PEB process. The result of simulation has a similar tendency with that of experiment.
Keywords