대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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- Pages.13-16
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- 2002
Gate length에 따른 LDMOS 전력 소자의 고온동작 특성연구
A Study on the High Temperature Characteristics of LDMOSFET under various Gate Length
- Park, Jae-Hyoung (Dept. of Electronic Eng. Sogang Univ.) ;
-
Koo, Yong-Seo
(Dept. of Electronic Eng. Seokyeong Univ.)
;
-
Koo, Jin-Gun
(ETRI)
;
- An, Chul (Dept. of Electronic Eng. Sogang Univ.)
- 발행 : 2002.06.01
초록
In this study, the electrical characteristics of 100v-Class LDMOSFET for high temperature applicat -ions such as electronic control systems of automo -biles and motor driver were investigated. Measurement data are taken over wide range of temperature(300k-SOOK) and various gate length(1.5 #m-3.0#m, step 0.3). In high temperature condition(>500k), drain current decreased over 30%, and specific on- resistance increased about three times in comparison with room temperature. Moreover, the ratio ROJBV, a figure of merit of the device, increased with increasing temperature.
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