Design of 2-Stage Power Amplifiers for IMT-2000 Handsets

IMT-2000 단말기용 HBT 2단 전력증폭기 설계

  • 정동영 (동아대학교 전자공학과) ;
  • 정봉식 (동아대학교 전자공학과)
  • Published : 2002.06.01

Abstract

In this paper, 2-stage Power amplifier with external bias controller for\ulcorner IMT-2000 handsets was designed using SiGe HBT with excellent linearity to 1\ulcornereduce size and weight. The designed amplifier has 26.5 dBm output power, 33% power added efficiency, and 22 dB linear power gain in 1920-1980MHz frequency range.

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