Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2002.07c
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- Pages.1593-1595
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- 2002
Crystal growth of 3C-SiC on Si(100) Wafers
Si(100)기판상에 3C-SiC결정성장
- Chung, Yun-Sik (Dongseo University) ;
- Chung, Gwiy-Sang (Dongseo University) ;
- Nishino, Shigehiro (Kyoto Institute of Technology)
- Published : 2002.07.10
Abstract
Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3
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