Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2002.07c
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- Pages.1578-1580
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- 2002
Breakdown and On-state characteristics of the Multi-RESURF SOI LDMOSFET
Epi층의 농도 및 두께 변화에 따른 Multi-RESURF SOI LDMOSFET의 특성분석
- Kim, Hyoung-Woo (Power Semiconductor Group, Korea Electrotechnology Research Institute) ;
- Kim, Sang-Cheol (Power Semiconductor Group, Korea Electrotechnology Research Institute) ;
- Seo, Kil-Su (Power Semiconductor Group, Korea Electrotechnology Research Institute) ;
- Kim, Nam-Kyun (Power Semiconductor Group, Korea Electrotechnology Research Institute) ;
- Kim, Eun-Dong (Power Semiconductor Group, Korea Electrotechnology Research Institute)
- 김형우 (한국전기연구원 전략기술연구단 전력반도체연구그룹) ;
- 김상철 (한국전기연구원 전략기술연구단 전력반도체연구그룹) ;
- 서길수 (한국전기연구원 전략기술연구단 전력반도체연구그룹) ;
- 김남균 (한국전기연구원 전략기술연구단 전력반도체연구그룹) ;
- 김은동 (한국전기연구원 전략기술연구단 전력반도체연구그룹)
- Published : 2002.07.10
Abstract
The breakdown and on-state characteristics of the multi-RESURF SOI LDMOSFET is presented. P-/n-epi layer thickness and doping concentration is varied from
Keywords