Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of AlN thin film using RF Magnetron Sputtering

RF Magnetron Sputtering 법으로 증착된 AlN 박막의 특성

  • 조인호 (경북대학교 대학원 전자공학과) ;
  • 장철영 (경북대학교 대학원 전자공학과) ;
  • 고성용 (경북대학교 대학원 전자공학과) ;
  • 이용현 (경북대학교 전자전기컴퓨터 공학부)
  • Published : 2001.11.08
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Abstract

Aluminum nitride(AlN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AlN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, $200^{\circ}C$ of substrate temperature and 15 mTorr of working pressure. The leakage current density was less then $1.3{\times}10^{-7}A/cm^{2}$. And it was also investigated the etching properties of deposited AlN thin films for application.

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