Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on DC Analysis of 4H-SiC Recessed-Gate MESFETs using modeling tools

4H-SiC Recessed-gate MESFET의 DC특성 모델링 연구

  • 박승욱 (명지대학교 세라믹 공학과) ;
  • 강수창 (명지대학교 세라믹 공학과) ;
  • 박재영 (명지대학교 세라믹 공학과) ;
  • 신무환 (명지대학교 세라믹 공학과)
  • Published : 2001.11.08
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Abstract

In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitiations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

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