The Patterning of Polyimide Thin Films for the Additive $CF_4$ gas

$CF_4$ 첨가에 따른 polyimide 박막의 패터닝 연구

  • 강필승 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부) ;
  • 김상기 (ETRI 회로소자기술연구소)
  • Published : 2001.11.08

Abstract

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

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