한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

반도성 ZnO 세라믹 입계에서 Si 원자 거동에 따른 열화기구

The Degradation Mechanism with Si Atom's Behaviors in the Grainboundary of Semiconducting ZnO Ceramics

  • 소순진 (원광대학교 대학원 전자재료공학과) ;
  • 김영진 (삼례공업고등학교 전자통신과) ;
  • 김응권 (원광대학교 대학원 전자재료공학과) ;
  • 송민종 (광주보건대학 의료정보공학과) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • 발행 : 2001.05.11
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초록

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.

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