Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2001.11a
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- Pages.165-167
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- 2001
Emitter Injection Efficiency of Gaussian Impurity Distributions in PT-IGBT
가우시안 농도 분포를 갖는 PT-IGBT의 에미터 주입효율
- Kim, Chung-Hee (School of Electronics Engineering, Ajou University) ;
- Choi, Yeam-Ik (School of Electronics Engineering, Ajou University) ;
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Chung, Sang-Koo
(School of Electronics Engineering, Ajou University)
- Published : 2001.11.03
Abstract
Emitter injection efficiency of p+/n-buffer Junction with Gaussian impurity distribution is presented. This model takes into account the variation of the carrier lifetime with injection level which allows a unified interpretation of the injection efficiency for all injection level. The injected carrier density and injection efficiency of the anode are calculated as a function of the current density with the low level lifetime as a parameter for different thicknesses of the anode. The analytical results agree well with simulation.
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