A Study on Carbon monoxide Gas Sensing Characteristics of Pt-SiC Schottky Diode Schottky Diode

Pt-SiC 쇼트키 다이오드를 이용한 CO Gas 감지 특성에 대한 연구

  • Nho, I.H. (Division of Information Technology Engineering, Soonchunhyang University) ;
  • Lee, J.H. (Division of Information Technology Engineering, Soonchunhyang University) ;
  • Yang, S.J. (Division of Information Technology Engineering, Soonchunhyang University) ;
  • Jang, S.W. (Division of Information Technology Engineering, Soonchunhyang University) ;
  • Kim, C.K. (Division of Information Technology Engineering, Soonchunhyang University)
  • 노일호 (순천향대학교 정보기술공학부) ;
  • 이주헌 (순천향대학교 정보기술공학부) ;
  • 양성준 (순천향대학교 정보기술공학부) ;
  • 장석원 (순천향대학교 정보기술공학부) ;
  • 김창교 (순천향대학교 정보기술공학부)
  • Published : 2001.11.03

Abstract

Carbon monoxide-sensing behavior of Pt-SiC Schottky diodes. fabricated on the same SiC substrate have been systematically compared and analyzed as a function of carbon monoxide concentrati on and temperature by I-V and ${\Delta}I$-t methods under steady-state and transient condition. Adsorption activation energies of Carbon monoxide on the surface of Pt-SiC Schottky diodes is investigated in a high temperature range ($100{\sim}500^{\circ}C$). The optimal temperature for behavior sensing is $300^{\circ}C$ and saturation concentration is 200 ppm.

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