Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2001.11a
- /
- Pages.26-28
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- 2001
Trench Schottky Diode with Gurad Ring
Guard Ring을 가진 Trench 쇼트키 다이오드
- Moon, Jin-Woo (School of Electronics Engineering, Ajou University) ;
-
Chung, Sang-Koo
(School of Electronics Engineering, Ajou University)
;
- Choi, Yeun-Ik (School of Electronics Engineering, Ajou University)
- Published : 2001.11.03
Abstract
A Trench schottky diode with guard ring is proposed to improve the forward current density and reverse breakdown voltage. The simulation results by Silvaco have shown that the reverse breakdown voltage of the proposed device was found to be 22.1V while that of conventional trench device was 17.25V. The breakdown voltage of the proposed structure was 28.1% higher than that of the conventional trench structure.
Keywords