Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2001.10a
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- Pages.192-195
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- 2001
Power Conversion Circuits using SiC Schottky Barrier Diode
SiC 다이오드를 이용한 전력변환회로
- Lee, Yoo-Shin (Dept. of E.E.C. Eng., Hanyang University) ;
- Oh, Duk-Jin (Dept. of Electrical Eng., Hanyang University) ;
- Kim, Hee-Jun (School of Electrical & Computer Science Eng., Hanyang University)
- Published : 2001.10.26
Abstract
In this report, we firstly have investigated the electrical characteristics of silicon carbide (SiC) schottky barrier diode and compared the characteristics to those of conventional Si diode through simulation and experiment. Secondly we have investigated the influence of two kinds of diodes to the power conversion circuit of the systems. From the investigation results it is verified that SiC schottky barrier diode is more superior to Si diode in thermal and reverse recovery, characteristics, which are the important factors in the size reduction and higher reliability of the systems. Finally though the experiment applied to PFC(Power Factor Correction) circuits, we precisely verified excellency to thermal characteristic of SiC schottky barrier diode any other diode.
Keywords