한국표면공학회:학술대회논문집 (Proceedings of the Korean Institute of Surface Engineering Conference)
- 한국표면공학회 2001년도 추계학술발표회 초록집
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- Pages.68-68
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- 2001
ANALYSIS OF THIN FILM POLYSILICON ON GLASS SYNTHESIZED BY MAGNETRON SPUTTERING
- Min J. Jung (Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Yun M. Chung (Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Lee, Yong J. (Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Jeon G. Han (Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
- 발행 : 2001.11.01
초록
Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature (
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