Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2001.10a
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- Pages.644-647
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- 2001
Electrical Characteristics on MOS Structure with Irradiation of Radiation
방사선이 조사된 MOS구조에서의 전기적 특성
Abstract
The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si-
이 연구에서는 P-MOS 커패시터에 Co
Keywords