Treatment of Waste Dry Etching Gas in Semiconductors Manufacturing Process

  • Yamamoto, Hideki (Department of Chemical Engineering, Faculty of Engineering, Kansai University) ;
  • Kawahara, Takahiro (Department of Chemical Engineering, Faculty of Engineering, Kansai University) ;
  • Shibata, Junji (Department of Chemical Engineering, Faculty of Engineering, Kansai University)
  • Published : 2001.10.01

Abstract

A new technology to make fluoride gas such as NF$_3$contained in the exhaust gas from semiconductor manufacturing plants convert directly into a harmless substance have been established and new concept on the disposal treatment of global warming gases were presented. Experimental results verify that the chemical reactions can be take place at substantially lower temperature of 80-40$0^{\circ}C$ as compared with the combustion treatment method. Reaction product is mainly metal fluoride which is a harmless and a valuable chemical material as one of new resources. The other favorable characteristics are that the continuous treatment is possible at a low temperature under atmospheric pressure. Furthermore this process is compact, easily controllable and safely operable at low running cost. This paper concerns with a new harmless disposal treatment of toxic global warming gas.

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