Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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DC Characteristics of InP/InGaAs HPT's with an Optically Transparent ITO Emitter electrode

광학적 투명성을 가진 ITO를 에미터 전극으로 사용한 InP/lnGaAs HPT's의 DC 특성 분석

  • 강민수 (영남대학교 전자공학과) ;
  • 한교용 (영남대학교 전자공학과)
  • Published : 2001.06.01
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Abstract

InP/InGaAs Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter electrode were fabricated and characterized. At the same time, heterojuntion transistors(HBT's) having the same device layout were fabricated. By comparison with InP/InGaAs HBT's, the do characteristics of InP/InGaAs HPT's showed the similar electrical charateristics of HBT's. the model parameters of the device were extracted and compared.

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