한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

고정밀 저항용 질화탄탈 박막의 특성

Characteristic of Tantalum Nitride Thin-films for High Precision Resistors

  • 최성규 (영남대학교 전자공학과) ;
  • 나경일 (동서대학교 정보시스템공학부 메카트로닉스전공) ;
  • 남효덕 (영남대학교 전자공학과) ;
  • 정귀상 (동서대학교 정보시스템공학부 메카트로닉스전공)
  • 발행 : 2001.11.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

키워드