사파이어 기판의 방향에 따른 ZnO 박막의 결정화 거동

Sapphire orientation dependence of the crystallization of ZnO thin films

The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.