Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Characteristics of Polishing Pad in STI-CMP Process

STI-CMP 공정에 미치는 연마 패드 특성에 관한 연구

  • 박성우 (대불대학교 전기공학과) ;
  • 박성우 (대불대학교 전기공학과) ;
  • 김상용 (아남 반도체 FAB 사업부) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 2001.07.01
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Abstract

We studied the characteristics of polishing pad, which can apply STI-CMP process for global planarization of multilevel interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was defected less than 2 on JRlll pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and devise yield.

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