대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

$O_2/CF_4$ 유도결합 플라즈마를 이용한 Polyimide 박막의 식각 특성

Etching Characteristics of Polyimide Film as Interlayer Dielectric Using Inductively Coupled ($O_2/CF_4$)Plasma

  • 강필승 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Kang, Pil-Seung (School of Electronic and Electrical Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electronic and Electrical Engineering, Chung-Ang University)
  • 발행 : 2001.07.18
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초록

In this study, etching characteristics of polyimide(Pl) film with $O_2/CF_4$ gas mixing ratio was studied using inductively coupled plasma (ICP). The etch rate and selectivity were evaluated to chamber pressure and gas mixing ratio. High etch rate (over 8000$\AA$/min) and vertical profile were acquired in $CF_4$/($CF_4+O_2$) of 0.2. The selectivities of polyimide to PR and polyimide to $SiO_2$ were 1.15, 5.85, respectively. The profiles of polyimide film etched in $CF_4/O_2$ were measured by a scanning electron microscope (SEM) with using an aluminum hard mask pattern. The chemical states on the polyimide film surface were measured by x-ray photoelectron spectroscopy (XPS).

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