Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The study on dielectric and thermal property of $Ta_2O_5$ Thin-films

$Ta_2O_5$의 유전 특성과 안정성에 관한 연구

  • 김인성 (한국전기연구원, 전자기소자연구그룹) ;
  • 송재성 (한국전기연구원, 전자기소자연구그룹) ;
  • 이동윤 (한국전기연구원, 전자기소자연구그룹) ;
  • 김도한 (한국전기연구원, 전자기소자연구그룹) ;
  • 김현식 ((주)메트론)
  • Published : 2001.07.18
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Abstract

The tantalum oxide($Ta_2O_5$) is an important material for present thin-film capacitor application owing to its high dielectric constant and thermal stability. We report dielectric property of Si(p type)/Pt/$Ta_2O_5$/Ag based MIM structure obtained by RF sputtering and annealed in vacuum environment. We have measured and researched the characteristics of C-F, C-V and EPMA. And we describe parameter dependence on sputtered condition and annealed temperature with dielectric property.

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