Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2001.07c
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- Pages.1469-1471
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- 2001
Study of Characteristics of Dual Channel Trench IGBT
Dual Channel을 가진 Trench Insulated Gate Biploar Transistor(IGBT)특성 연구
- Moon, Jin-Woo (School of Electronics Engineering, Ajou University) ;
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Chung, Sang-Koo
(School of Electronics Engineering, Ajou University)
- Published : 2001.07.18
Abstract
A Dual Channel Trench IGBT (Insulated Gate Bipolar Transistor) is proposed to improve the latch-up characteristics. Simulation results by MEDICI have shown that the latching current density of proposed device was found to be 2850 A/
Keywords