대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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Hot Wire CVD를 이용한 다결정 Si 박막의 고속 저온 증착

Fast and Low Temperature Deposition of Polycrystalline Silicon Films by Hot Wire CVD

  • 이정철 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 강기환 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 김석기 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 윤경훈 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 송진수 (한국에너지기술연구원, 태양광발전연구팀) ;
  • 박이준 (한국에너지기술연구원, 태양광발전연구팀)
  • Lee, Jeong-Chul (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kang, Ki-Whan (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kim, Seok-Ki (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Yoon, Kyung-Hoon (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Song, Jin-Soo (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Park, I-Jun (Photovoltaic Research Team, Korea Institute of Energy Research)
  • 발행 : 2001.07.18
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초록

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-Wire CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the wire temperature($T_w$). The films deposited at high $T_w$ of 2000$^{\circ}C$ have superior crystalline properties; average lateral grain sizes are larger than $1{\mu}m$ and there at·e no vertical grain boundaries. The surface of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and textured surface are believed to give high current density when applied to solar cells. However, the poly-si films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

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