Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2001.07c
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- Pages.1427-1429
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- 2001
Fast and Low Temperature Deposition of Polycrystalline Silicon Films by Hot Wire CVD
Hot Wire CVD를 이용한 다결정 Si 박막의 고속 저온 증착
- Lee, Jeong-Chul (Photovoltaic Research Team, Korea Institute of Energy Research) ;
- Kang, Ki-Whan (Photovoltaic Research Team, Korea Institute of Energy Research) ;
- Kim, Seok-Ki (Photovoltaic Research Team, Korea Institute of Energy Research) ;
- Yoon, Kyung-Hoon (Photovoltaic Research Team, Korea Institute of Energy Research) ;
- Song, Jin-Soo (Photovoltaic Research Team, Korea Institute of Energy Research) ;
- Park, I-Jun (Photovoltaic Research Team, Korea Institute of Energy Research)
- 이정철 (한국에너지기술연구원, 태양광발전연구팀) ;
- 강기환 (한국에너지기술연구원, 태양광발전연구팀) ;
- 김석기 (한국에너지기술연구원, 태양광발전연구팀) ;
- 윤경훈 (한국에너지기술연구원, 태양광발전연구팀) ;
- 송진수 (한국에너지기술연구원, 태양광발전연구팀) ;
- 박이준 (한국에너지기술연구원, 태양광발전연구팀)
- Published : 2001.07.18
Abstract
Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-Wire CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the wire temperature(
Keywords