Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2001.07c
- /
- Pages.1414-1416
- /
- 2001
Preperation of PZT ferroelectric thin films by sol-gel processing
졸-겔법에 의한 강유전체 박막의 제작
- Lee, B.S. (Inha univ.) ;
- Shin, T.H. (yuhan coll.) ;
- Cho, G.S. (yuhan coll.) ;
- Yuk, J.H. (yuhan coll.) ;
- You, D.H. (ansan tech coll.) ;
-
Kim, Y.H.
(kyungwon coll.)
;
- Kim, S.O. (samsung SDI) ;
- Ji, S.H. (hanyang elec) ;
- Lee, D.C. (Inha univ.)
- 이병수 (인하대학교 전기과) ;
- 신태현 (유한대학 전기과) ;
- 조기선 (유한대학 전기과) ;
- 육재호 (유한대학 전기과) ;
- 유도현 (안산공과대학 전기과) ;
-
김용혁
(경원전문대학 전기과)
;
- 김성오 (삼성SDI) ;
- 지승한 (한양전력(주)) ;
- 이덕출 (인하대학교 전기과)
- Published : 2001.07.18
Abstract
Crack-free and homogeneous compact and epitaxial lead zirconate titanate(PZT) ferroelectric thin films with perovsikte structure have been prepared by sol-eel method. Tetrabutyl titanate, lead acetate and zirconium nitrate are used as raw materials. Glacial acetic acid is used as a catalyst. Ethylene glycol monoethyl ether is used as a solvent. The annealing temperatures of th thin films are 600~900
Keywords